Methods of forming thin-film transistor display devices

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S066000, C257SE27131

Reexamination Certificate

active

11064919

ABSTRACT:
Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line and the source/drain electrode are formed as composites of at least two different metal conductive layers. A transparent pixel electrode is formed that is electrically coupled to the drain electrode.

REFERENCES:
patent: 5153690 (1992-10-01), Tsukada et al.
patent: 5155559 (1992-10-01), Humphreys et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5585647 (1996-12-01), Nakajima et al.
patent: 5731856 (1998-03-01), Kim et al.
patent: 5808706 (1998-09-01), Bae
patent: 5851912 (1998-12-01), Liaw et al.
patent: 6087678 (2000-07-01), Kim
patent: 6339230 (2002-01-01), Lee et al.
patent: 6507045 (2003-01-01), Gu et al.
patent: 6545292 (2003-04-01), Kim
patent: 6566686 (2003-05-01), Kim
patent: 6593990 (2003-07-01), Yamazaki
patent: 6853083 (2005-02-01), Yamauchi et al.
patent: 6878966 (2005-04-01), Kim

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of forming thin-film transistor display devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming thin-film transistor display devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming thin-film transistor display devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3898756

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.