Dual damascene interconnect structure with improved electro...

Details Dual damascene interconnect structure with improved electro... Dual damascene interconnect structure with improved electro...

2007-12-25

2007-12-25

Rose, Kiesha L. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S776000

Reexamination Certificate

active

11090107

ABSTRACT:
A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.

REFERENCES:
patent: 6207577 (2001-03-01), Wang et al.
patent: 6211063 (2001-04-01), Liu et al.
patent: 6271117 (2001-08-01), Cherng
patent: 6294465 (2001-09-01), Hernandez et al.
patent: 6461955 (2002-10-01), Tsu et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6642146 (2003-11-01), Rozbicki et al.

Affiliated with

Also associated with

Rating

Dual damascene interconnect structure with improved electro... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual damascene interconnect structure with improved electro..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual damascene interconnect structure with improved electro... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3897162