Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-12-18
2007-12-18
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51027
Reexamination Certificate
active
10535403
ABSTRACT:
An organic FET1comprises a substrate2on which a gate insulation film41and a functional layer43are formed in this order, and a source electrode6and a drain electrode8are further arranged thereon at a predetermined distance from each other, and furthermore, an organic semiconductor layer10is formed on and between the electrodes6and8. The functional layer43provided so as to come into contact with the organic semiconductor layer10is composed of matrix polymers such as PMMA in which electron acceptors such as p-bromanil are contained.
REFERENCES:
patent: 5355235 (1994-10-01), Nishizawa et al.
patent: 5705826 (1998-01-01), Aratani et al.
patent: 6017801 (2000-01-01), Youn
patent: 6048756 (2000-04-01), Lee et al.
patent: 6064090 (2000-05-01), Miyamoto et al.
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6946676 (2005-09-01), Kelley et al.
patent: 6963080 (2005-11-01), Afzali-Ardakani et al.
patent: 2003/0102471 (2003-06-01), Kelley et al.
patent: 2004/0222412 (2004-11-01), Bai et al.
patent: 2004/0222463 (2004-11-01), Yeo et al.
patent: A 08-191162 (1996-07-01), None
patent: B2 2984370 (1999-09-01), None
patent: WO 92/01313 (1992-01-01), None
Akiharu Iwatsuki et al., “2, 5-dimethylene-2, 5-dihydrothiophenel Yudotai no Gosei to Jugo”, Journal of the Chemical Society of Japan, vol. 3, 1992, pp. 335-340, with translation.
Oliff & Berridg,e PLC
Purvis Sue A.
Rodela Eduardo A.
TDK Corporation
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