Field-effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51027

Reexamination Certificate

active

10535403

ABSTRACT:
An organic FET1comprises a substrate2on which a gate insulation film41and a functional layer43are formed in this order, and a source electrode6and a drain electrode8are further arranged thereon at a predetermined distance from each other, and furthermore, an organic semiconductor layer10is formed on and between the electrodes6and8. The functional layer43provided so as to come into contact with the organic semiconductor layer10is composed of matrix polymers such as PMMA in which electron acceptors such as p-bromanil are contained.

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patent: WO 92/01313 (1992-01-01), None
Akiharu Iwatsuki et al., “2, 5-dimethylene-2, 5-dihydrothiophenel Yudotai no Gosei to Jugo”, Journal of the Chemical Society of Japan, vol. 3, 1992, pp. 335-340, with translation.

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