Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2007-02-13
2007-02-13
Tra, Quan (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S535000, C327S537000
Reexamination Certificate
active
10851156
ABSTRACT:
The well voltage of a CMOS circuit having low-threshold-voltage MOSFETs is controlled when the power supply is turned on, during normal operation, and when the supply voltage is cut off. The CMOS circuit can thus operate stably with lower power consumption, because latching-up is reduced when the supply voltage is applied to the CMOS circuit or when the supply voltage is cut off, and subthreshold current is decreased during normal operation.
REFERENCES:
patent: 4837460 (1989-06-01), Uchida
patent: 5043597 (1991-08-01), Furuyama et al.
patent: 5148393 (1992-09-01), Furuyama
patent: 5394365 (1995-02-01), Tsukikawa
patent: 5422591 (1995-06-01), Rastegar et al.
patent: 5448198 (1995-09-01), Toyoshima et al.
patent: 5497023 (1996-03-01), Nakazato et al.
patent: 5583457 (1996-12-01), Horiguchi et al.
patent: 5656970 (1997-08-01), Campbell et al.
patent: 5748029 (1998-05-01), Tomashini et al.
patent: 5751651 (1998-05-01), Ooishi
patent: 5801576 (1998-09-01), Ooishi
patent: 5838047 (1998-11-01), Yamauchi et al.
patent: 5861771 (1999-01-01), Matsuda et al.
patent: 5874851 (1999-02-01), Shiota
patent: 5880623 (1999-03-01), Levinson
patent: 6031778 (2000-02-01), Makino et al.
patent: 6097113 (2000-08-01), Teraoka et al.
patent: 6232793 (2001-05-01), Arimoto et al.
patent: 6373321 (2002-04-01), Yamauchi et al.
T. Kuroda et al, “Low-Power & Communication Signal Processing”, IEEE International Solid State Circuit, Digest of Technical Papers, 1996, pp. 166-167.
S. Itoh, “Cho-eluesuai”, Baifukan, Nov. 5, 1994, pp. 239-328.
Itoh Kiyoo
Mizuno Hiroyuki
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
Tra Quan
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3894529