Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-12-25
2007-12-25
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S720000, C438S736000
Reexamination Certificate
active
11373335
ABSTRACT:
A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to narrow a width of the lines of the first pattern, etching the second film by using the first pattern as a mask to form a second pattern having a configuration of the first pattern transferred thereto, forming a third film above the substrate to cover the second pattern, filling a recessed portion of the third film corresponding to a gap between the lines of the second pattern with a fourth film, and removing a portion of the third film which is located on opposite sides of the fourth film, and a portion of the first film which is located below the third film to form a third pattern.
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Miyagawa Osamu
Oguma Hideki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Vinh Lan
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