Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-10-09

2007-10-09

Doan, Theresa (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000

Reexamination Certificate

active

10824229

ABSTRACT:
Provides a semiconductor that enables to suppress deformation of the opening portions due to thermal expansion and contraction and to improve production yield and reliability wiring, and a method of fabricating the same. A first conductive layer and a second conductive layer are formed on a substrate. An insulation film is formed on upper surfaces of the first and second conductive layers and has a plurality of first opening portions to expose either the first or second conductive layer and a plurality of second opening portions to expose neither the first nor the second conductive layer. The second opening portions are formed between the first opening portions. A third conductive layer formed on an upper surface of the insulation film and has an electrical connection between the first and second conductive layers through the first opening portions.

REFERENCES:
patent: 5880503 (1999-03-01), Matsumoto et al.
patent: 6649509 (2003-11-01), Lin et al.
patent: 2003/0116852 (2003-06-01), Watanabe et al.

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