Solid-state imaging device and manufacturing method for...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Reexamination Certificate

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10438331

ABSTRACT:
A solid-state imaging device comprises a semi-conductor substrate demarcating a two-dimensional surface, a multiplicity of photoelectric conversion units formed at grid points of a first grid of a first tetragonal matrix and a second tetragonal matrix having grid points between grid points of the first tetragonal matrix, a vertical transfer channel arranged in a vertical direction by weaving a space between the horizontally adjacent photoelectric conversion units, a plurality of single-layered electrodes formed above the vertical transfer channel and arranged in a horizontal direction by weaving a space between the vertically adjacent photoelectric conversion units, and a signal processor having a gate electrode and formed, in correspondence to the vertical transfer channel, at one end of the vertical transfer channel on the semiconductor substrate. A low power consuming solid-state imaging device can be provided.

REFERENCES:
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patent: 6528831 (2003-03-01), Umetsu et al.
patent: 6806904 (2004-10-01), Kim
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patent: 2002/0154235 (2002-10-01), Kim
patent: 2003/0151075 (2003-08-01), Shizukuishi
patent: 09-051485 (1997-02-01), None
Tetsuo Yamada, et al.; “A Progressive Scan CCD Image Sensor for DSC Applications”; Dec. 2000; IEE Journal of Solid-State Circuits, vol. 35 No. 12.

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