Integrated semiconductor memory comprising at least one word...

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

Reexamination Certificate

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C365S230030

Reexamination Certificate

active

11140554

ABSTRACT:
An integrated semiconductor memory includes at least one word line and a number of memory cells. Each memory cell has a selection transistor coupled to the word line. A word line driver is coupled to the word line. The word line driver provides a first electrical potential or a second electrical potential to the word line such that the word line is activated by the first electrical potential and is deactivated by the second electrical potential. A passive component (e.g., a diode or a resistor) is coupled between the word line and the second electrical potential such that the word line is coupled to the second electrical potential in a high-resistance fashion through the passive component. The passive component is transmissive for a leakage current between the word line and the contact connection.

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patent: 2006/0120176 (2006-06-01), Schneider et al.
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patent: 0 626 645 (1994-11-01), None

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