Semiconductor device and method for manufacturing...

Details Semiconductor device and method for manufacturing... Semiconductor device and method for manufacturing...

2007-06-05

2007-06-05

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S774000, C438S637000, C438S643000

Reexamination Certificate

active

10957164

ABSTRACT:
Single-crystalline silicon layers7aand7bare selectively formed on LDD layers5aand5bby an epitaxial growth method. Opening sections10aand10bare formed, which expose a source layer8and a drain layer8b, respectively, through an interlayer dielectric film9and the single-crystalline silicon layers7aand7b, respectively, and then, plugs12aand12bare formed in the opening sections10aand10bembedded through barrier metal films11aand11b, respectively.

REFERENCES:
patent: 5886385 (1999-03-01), Arisumi et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6548838 (2003-04-01), Anda et al.
patent: 2002/0117665 (2002-08-01), Yaegassi et al.
patent: 63-147318 (1988-06-01), None
patent: 63-169755 (1988-07-01), None
patent: 10-70274 (1998-03-01), None
patent: 2002-009015 (2002-01-01), None
patent: WO-02/33746 (2002-04-01), None
Examination Result dated Dec. 11, 2005 in Japanese.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3887620