Method for selectively etching polycide layer

Details Method for selectively etching polycide layer Method for selectively etching polycide layer

1997-03-11

1998-08-11

Angebranndt, Martin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 252 791, H01L 21302

Patent

active

057927103

ABSTRACT:
Disclosed herein is a method of manufacturing a semiconductor device, the method including a step of anisotropic-etching of a high-melting-point (or refractory) metal silicide layer by use of a halogen-containing gas using. This halogen-containing gas has a boron trichloride gas as a main component gas and either one of a chlorine gas or a hydrogen bromide gas as an auxiliary or a sub-component gas.

REFERENCES:
patent: 4479850 (1984-10-01), Beinvogl et al.
patent: 4490209 (1984-12-01), Hartman
patent: 4778563 (1988-10-01), Stone
patent: 4855017 (1989-08-01), Douglas
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5112435 (1992-05-01), Wang et al.
patent: 5238887 (1993-08-01), Yamada
patent: 5397744 (1995-03-01), Sumi et al.
patent: 5545290 (1996-08-01), Douglas

Affiliated with

Also associated with

Rating

Method for selectively etching polycide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for selectively etching polycide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selectively etching polycide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-388711