Integrated passive devices

Details Integrated passive devices Integrated passive devices

2007-08-21

2007-08-21

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S239000

Reexamination Certificate

active

10835338

ABSTRACT:
The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

REFERENCES:
patent: 5920764 (1999-07-01), Hanson et al.
patent: 2004/0232107 (2004-11-01), Kouma et al.
patent: 2005/0023590 (2005-02-01), Lian et al.

Affiliated with

Also associated with

Rating

Integrated passive devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated passive devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated passive devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3887075