Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-11-27

2007-11-27

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21583, C438S692000

Reexamination Certificate

active

11033869

ABSTRACT:
A method of manufacturing a semiconductor device that prevents formation of scratches and occurrence of dishing in a CMP process. The method includes forming a first film on a part of a semiconductor substrate, forming a second film all over the semiconductor substrate, and a CMP process utilizing a ceria slurry to planarize the second film using the first film as a mask, the CMP process including performing a first CMP until a portion of the first film is exposed and performing a second CMP. A first ceria slurry of a predetermined abrasive grain concentration is employed in the first CMP, and a second ceria slurry of lower abrasive grain concentration is employed in the the second CMP. The number of scratches is reduced by reducing the abrasive grain concentration of the ceria slurry, and dishing is prevented by reducing a polishing rate ratio between the first and second films.

REFERENCES:
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patent: 2004/0152316 (2004-08-01), Ono et al.
patent: 2005/0075056 (2005-04-01), Wu et al.
patent: 2006/0246723 (2006-11-01), Park et al.
patent: 05-326469 (1993-12-01), None
patent: 2001-310256 (2001-11-01), None
patent: 2002-252279 (2002-09-01), None

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