Method of forming trench in semiconductor device using...

Details Method of forming trench in semiconductor device using... Method of forming trench in semiconductor device using...

2007-11-13

2007-11-13

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000

Reexamination Certificate

active

10722295

ABSTRACT:
A method of forming a trench in a semiconductor device includes forming a polish stop layer on a semiconductor substrate. The polish stop layer and the semiconductor substrate are then etched to form a trench. The semiconductor substrate is etched to a predetermined depth. Also, etching is performed such that ends of the polish stop layer adjacent to the trench are rounded. Next, an insulation layer that fills the trench is formed.

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