Nonvolatile semiconductor memory device using irreversible...

Details Nonvolatile semiconductor memory device using irreversible... Nonvolatile semiconductor memory device using irreversible...

2007-08-14

2007-08-14

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read only systems

Fusible

C365S094000, C365S195000, C365S201000

Reexamination Certificate

active

11231795

ABSTRACT:
A nonvolatile semiconductor memory device comprising a storage element which is programmed with information by varying electrical properties irreversibly, a selection switch connected in series to the storage element, a protection element connected in parallel to the storage element to protect the storage element from irreversible variations of electrical properties when the storage element is unprogrammed, a first activation circuit which activates the selection switch, a second activation circuit which activates the protection element in complement with the first activation circuit in normal mode, and a test circuit which conducts a test on the storage element while the second activation circuit is activating the protection element together with the first activation circuit in test mode.

REFERENCES:
patent: 5357471 (1994-10-01), Alapat
patent: 5886940 (1999-03-01), Morzano et al.
patent: 7046569 (2006-05-01), Ito et al.
patent: 7180764 (2007-02-01), Kim et al.
Hiroshi Ito, et al., “Pure CMOS One-time Programmable Memory using Gate-Ox Anti-fuse”, IEEE 2004 Custom Integrated Circuits Conference, 2004, pp. 469-472.
U.S. Appl. No. 11/231,983, filed Sep. 22, 2005, Nakano et al.

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