Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-06
2007-02-06
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S208000, C327S051000, C327S054000
Reexamination Certificate
active
10912520
ABSTRACT:
The memory device has a plurality of memory cells each coupled to a bitline. A feedback transistor is coupled to the bitline and provides voltage feedback on the bitline's precharge status. A biasing transistor is coupled to the feedback transistor. The biasing transistor provides a bias voltage to the feedback transistor in response to a reference voltage on the biasing transistor. A cascode-connected transistor is coupled to the feedback transistor and the biasing transistor. This transistor provides a stable bias voltage to the biasing transistor. An output latch circuit is coupled to the bitline for providing a latched output of the memory cell's data.
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Incarnati Michele
Santin Giovanni
Vali Tommaso
Leffert Jay & Polglaze P.A.
Mai Son L.
Micro)n Technology, Inc.
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