Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-11-27

2007-11-27

Phan, Trong (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S154000, C365S156000, C365S230030, C365S230050

Reexamination Certificate

active

10879753

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cell groups. Each memory cell group includes at least two memory cells. Each memory cell group includes a read section and a write section. The data of a memory cell is read from one bit line to a read global bit line through the read section. The write section is shared by at least two memory cells in the same memory cell group. Thus, writing of data in a memory cell is desirably achieved although the memory cell has a common 6-transistor structure.

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Japanese Office Action for Corresponding Application No. JP 2003-190052 Mailed Feb. 20, 2007.

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