Surface acoustic wave device and method of fabricating the same

Wave transmission lines and networks – Plural channel systems – Having branched circuits

Reexamination Certificate

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C333S193000, C029S025350

Reexamination Certificate

active

10809926

ABSTRACT:
A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.

REFERENCES:
patent: 5847489 (1998-12-01), Satoh et al.
patent: 6018211 (2000-01-01), Kanaboshi et al.
patent: 6114635 (2000-09-01), Lakin et al.
patent: 6445265 (2002-09-01), Wright
patent: 6621379 (2003-09-01), Goetz et al.
patent: 6822326 (2004-11-01), Enquist et al.
patent: 6853067 (2005-02-01), Cohn et al.
patent: 2003/0080832 (2003-05-01), Enshasy
patent: 0 609 062 (1994-08-01), None
patent: 1 071 126 (2000-01-01), None
patent: 54-14137 (1979-02-01), None
patent: 4-293310 (1992-10-01), None
patent: 5-235688 (1993-09-01), None
patent: 8-18390 (1996-01-01), None
patent: 8-274575 (1996-10-01), None
patent: 8-330894 (1996-12-01), None
patent: 10-163798 (1998-06-01), None
patent: 2000-68785 (2000-03-01), None
patent: 2001-053577 (2001-02-01), None
patent: 2001-110946 (2001-04-01), None
patent: 2003-008394 (2003-01-01), None
Takagi et al. “Wafer-Scale Room-Temperature Bonding Between Silicon And Ceramic Wafers By Means Of Argon-Beam Surface Activation”, The 14th Conference on Micro Electro Mechanical Systems 2001, MEMS 2001, pp. 60-63, Jan. 2001.
Tadatomo Suga, “Low Temperature Bonding by Means of the Surface Activated Bonding Method,” J. Japan Institute of Metals, 35-5, May 1996, pp. 496-500, 612.
Hideki Takagi, “Room-Temperature Bonding of Silicon Wafers by Means of the Surface Activation Method,” Report of Mechanical Engineering Laboratory No. 189, Dec. 2000, pp. cover, title page, table of contents, 68-75.
T. Shimatsu et al., “Metal Bonding During Sputter Film Deposition,” Journal of Vacuum Science and technology A. Vacumn, Surfaces and Films, American Institute of Physic, vol. 16, No. 4, Jul. 1998. pp. 2125-2131.

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