System and method for using plasma to adjust the resistance...

Details System and method for using plasma to adjust the resistance... System and method for using plasma to adjust the resistance...

2007-06-12

2007-06-12

Hoang, Tu (Department: 2832)

Electrical resistors

Resistance value responsive to a condition

Ambient temperature

C338S029000, C338S333000

Reexamination Certificate

active

10927357

ABSTRACT:
A system and method is disclosed for using plasma to adjust the resistance of a thin film resistor. In one advantageous embodiment of the invention, the resistance of a thin film resistor is increased to cause the thin film resistor to have a desired higher value of resistance. The thin film resistor is formed having an initial value of resistance that is less than the desired value of resistance. Then the thin film resistor is placed in an oxidizing atmosphere. A surface of the thin film resistor is then oxidized to increase the initial value of resistance to the desired value of resistance. The amount of the increase in resistance may be selected by selecting the temperature of the oxidizing atmosphere.

REFERENCES:
patent: 6809034 (2004-10-01), Ito et al.
patent: 2004/0075527 (2004-04-01), Zitzmann et al.
patent: 2004/0129673 (2004-07-01), Belyansky et al.
patent: 2004/0203241 (2004-10-01), Hampden-Smith et al.
patent: 2005/0003673 (2005-01-01), Mahdavi

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