Methods for producing a semiconductor entity

Details Methods for producing a semiconductor entity Methods for producing a semiconductor entity

2007-02-13

2007-02-13

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

C257S618000, C257SE21596, C257SE21590, C438S458000, C438S459000, C438S977000

Reexamination Certificate

active

10863193

ABSTRACT:
A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

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