MSM binary switch memory device

Details MSM binary switch memory device MSM binary switch memory device

2007-12-04

2007-12-04

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C257SE21304, C257SE21645, C257SE21646, C257SE21657, C257SE21659

Reexamination Certificate

active

11184660

ABSTRACT:
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top electrode, a semiconductor layer overlies the MSM bottom electrode, and an MSM top electrode overlies the semiconductor layer. The MSM bottom electrode can be a material such as Pt, Ir, Au, Ag, TiN, or Ti. The MSM top electrode can be a material such as Pt, Ir, Au, TiN, Ti, or Al. The semiconductor layer can be amorphous Si, ZnO2, or InO2.

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