Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-06-19
2007-06-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S758000, C257S773000
Reexamination Certificate
active
11082853
ABSTRACT:
A semiconductor device of this invention includes a first interconnect pattern formed on a semiconductor substrate and a second interconnect pattern formed above the first interconnect pattern with an interlayer insulating film sandwiched therebetween. The first interconnect pattern includes a dummy pattern insulated from the first interconnect pattern, and the dummy pattern includes a plurality of fine patterns adjacent to each other and air gaps formed between the adjacent fine patterns.
REFERENCES:
patent: 5519250 (1996-05-01), Numata
patent: 5861674 (1999-01-01), Ishikawa
patent: 6396146 (2002-05-01), Nakayama
patent: 08-181208 (1996-07-01), None
Nakagawa Hideo
Tamaoka Eiji
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Studebaker Donald R.
Vu Hung
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