Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-01-27
1994-07-12
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 55, 257 56, 257 58, 257 61, 257 66, 136258, H01L 2904, H01L 2978, H01L 2714
Patent
active
RE0346586
ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.
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Nagata Yujiro
Yamazaki Shunpei
Jackson Jerome
Semiconductor Energy Laboratory Co,. Ltd.
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