Method of correcting pattern data for drawing photomask to overc

Details Method of correcting pattern data for drawing photomask to overc Method of correcting pattern data for drawing photomask to overc

1996-07-23

1998-08-11

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430 5, 430296, G03C 500

Patent

active

057925810

ABSTRACT:
A correcting method and a correcting apparatus which consider a proximity effect when drawing a pattern of a photomask by an energy beam such as an electron beam or a light proximity effect when performing exposure by using a photomask and obtaining a transfer pattern and can correct the pattern data so that the finally obtained transfer pattern becomes close to the designed pattern even if they occur. Where there is another pattern at the periphery of a pattern in a certain mesh at a center which is subjected to mesh registration, it is decided that a mutual proximity effect will occur at the time of drawing, only a part of the patterns in which it can be considered that the mutual proximity effect will occur are subdivided, and the dosage amount data at drawing are assigned to individual subdivided patterns. Where there is not another pattern at the periphery, it is decided that the self proximity effect will occur at the time of drawing, the peripheral portions of the pattern in which it can be considered that the self proximity effect will occur are subdivided, and the dosage amount data at drawing are assigned to individual subdivided patterns.

REFERENCES:
patent: 5254438 (1993-10-01), Owen et al.
patent: 5432714 (1995-07-01), Chung et al.
patent: 5667923 (1997-09-01), Kanata

Affiliated with

Also associated with

Rating

Method of correcting pattern data for drawing photomask to overc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of correcting pattern data for drawing photomask to overc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of correcting pattern data for drawing photomask to overc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-387670