Substrate and method of forming substrate for fluid ejection...

Details Substrate and method of forming substrate for fluid ejection... Substrate and method of forming substrate for fluid ejection...

2007-10-16

2007-10-16

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S637000, C438S700000, C438S712000, C438S008000, C257SE21008, C257S223000, C257S245000, C257S229000

Reexamination Certificate

active

11211390

ABSTRACT:
A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced etch stops in the first side of the substrate, etching into the substrate from the second side toward the first side to the spaced etch stops, and etching into the substrate between the spaced etch stops from the second side. Etching into the substrate to the spaced etch stops includes forming a first portion of the opening and etching into the substrate between the spaced etch stops includes forming a second portion of the opening.

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