Method of manufacturing a gas flow meter

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S592100, C029S602100, C073S861354, C073S861355, C073S861357, C073S204230, C257S412000, C257S413000, C257S755000

Reexamination Certificate

active

11088175

ABSTRACT:
A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.

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patent: 2001-194202 (2001-07-01), None
“High-rangeability ultrasonic gas flowmeter for monitoring flare gas”; Mylvaganam, K.S.; Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on vol. 36, Issue 2; Mar. 1989; pp. 144-149.
“A constant-temperature gas flowmeter with a silicon micromachined package”; Mastrangelo, C.H.; Muller, R.S.; Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE; Jun. 6-9, 1988; pp. 43-46.

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