Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-10-16
2007-10-16
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C072S296000, C072S350000
Reexamination Certificate
active
11321642
ABSTRACT:
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.
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European Search Report (Application No. 00121021.0; EP4364) dated Apr. 23, 2007.
Isobe Atsuo
Shibata Hiroshi
Costellia Jeffrey L.
Nguyen Thanh
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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