Fabrication method for a multi-layered thin film protective...

Details Fabrication method for a multi-layered thin film protective... Fabrication method for a multi-layered thin film protective...

2007-06-05

2007-06-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S030000, C438S038000, C438S118000, C438S763000, C349S155000

Reexamination Certificate

active

10794528

ABSTRACT:
A fabrication method for a multi-layered thin film protective layer, which is applicable on a substrate having a peripheral circuit area and a pixel cell area, is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell area, respectively. A first oxide layer, a silicon nitride layer and a second oxide layer are sequentially formed on the pixel cells and the metal layers. The second oxide layer is then patterned to define a pre-determined position of a pad spacer in the pixel cell area and the peripheral circuit area. The silicon nitride layer and the first oxide layer are further defined to form a first protective layer in the peripheral circuit area and to from a pad spacer in the pixel cell area exposing the pixel cells. A second protective layer is then formed on the exposed pixel cells.

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