Systems and methods for thin film thermal diagnostics with...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C257SE21135

Reexamination Certificate

active

11219141

ABSTRACT:
Systems and methods are described for identifying characteristics and defects in material such as semiconductors. Methods include scanning a thermal probe in the vicinity of a semiconductor sample, applying stimuli to the thermal probe, and monitoring the interaction of the thermal probe and the semiconductor. The stimulus can be applied by a variety of methods, including Joule heating of a resistor in the proximity of the probe tip, or optically heating a tip of the thermal probe using a laser. Applications of the invention include identification of voids in metallic layers in semiconductors; mapping dopant concentration in semiconductors; measuring thickness of a sample material; mapping thermal hot spots and other characteristics of a sample material.

REFERENCES:
patent: 5246782 (1993-09-01), Kennedy et al.
patent: 6996147 (2006-02-01), Majumdar et al.
patent: 6998278 (2006-02-01), Silverbrook
patent: 2002/0011852 (2002-01-01), Mandelis et al.
patent: 2005/0214956 (2005-09-01), Li et al.

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