Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-08-28
2007-08-28
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C257SE21135
Reexamination Certificate
active
11219141
ABSTRACT:
Systems and methods are described for identifying characteristics and defects in material such as semiconductors. Methods include scanning a thermal probe in the vicinity of a semiconductor sample, applying stimuli to the thermal probe, and monitoring the interaction of the thermal probe and the semiconductor. The stimulus can be applied by a variety of methods, including Joule heating of a resistor in the proximity of the probe tip, or optically heating a tip of the thermal probe using a laser. Applications of the invention include identification of voids in metallic layers in semiconductors; mapping dopant concentration in semiconductors; measuring thickness of a sample material; mapping thermal hot spots and other characteristics of a sample material.
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patent: 2005/0214956 (2005-09-01), Li et al.
Gianchandani Yogesh B.
McNamara Shamus
Lebentritt Michael
Perkins Coie LLP
PicoCal, Inc.
Stevenson Andre′
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