Semiconductor device with electrically biased die edge seal

Details Semiconductor device with electrically biased die edge seal Semiconductor device with electrically biased die edge seal

2007-06-26

2007-06-26

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S660000, C257S730000, C257SE23193

Reexamination Certificate

active

10976876

ABSTRACT:
A die seal arrangement and method for making the same negatively biases the die edge seal of a die by connecting the die edge seal to a source of negative electrical potential, with respect to electrical ground. The die edge seal, made of copper, for example, has its oxidation reaction potential shifted to a region which is energetically unfavorable. This significantly retards or eliminates oxidation of the copper die edge seal at circuit operation temperature, thereby maintain the integrity and functionality of the die edge seal to protect active circuitry on the die, even when the die edge seal is exposed to moisture and air.

REFERENCES:
patent: 4656055 (1987-04-01), Dwyer
patent: 2002/0152925 (2002-10-01), Soutar et al.
patent: 2005/0095835 (2005-05-01), Humpston et al.
patent: 2006/0055007 (2006-03-01), Yao et al.

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