Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-08-28
2007-08-28
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257SE29072, C257SE33008, C438S048000
Reexamination Certificate
active
10512501
ABSTRACT:
An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adapted to receive electromagnetic radiation in a desired portion of the THz region, are electrically coupled (or integrally formed with) the p-channel injector electrodes of the heterojunction thyristor device such the that antenna elements are electrically connected to the p-type modulation doped quantum well interface of the device. THz radiation supplied by the antenna elements to the p-type quantum well interface increases electron temperature of a two-dimensional electron gas at the p-type modulation doped quantum well interface thereby producing a current resulting from thermionic emission over a potential barrier provided by said first-type modulation doped quantum well interface. This current flows over the p-type channel barrier to the ntype quantum well interface, thereby causing charge to accumulate in the n-type quantum well interface. The accumulated charge in the n-type quantum well interface is related to the intensity of the received THz radiation. The heterojunction-thyristor-based THz detector is suitable for many applications, including data communication applications and imaging applications.
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“Resonant Tunneling through Quantum Wells at Frequencies up to 2.5 Thz”; T.C.L.G. Sollner, W.D. Goodhue. P.E. Tannenwald, C.D. Parker and D.D. Peck, Jul. 1983.
Gordon & Jacobson, PC
Pert Evan
Wilson Scott R.
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