Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2007-02-27
2007-02-27
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C438S132000, C438S467000, C438S600000, C257SE21575, C257SE21592
Reexamination Certificate
active
11026105
ABSTRACT:
A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.
REFERENCES:
patent: 3719933 (1973-03-01), Wakabayahi et al.
patent: 3810127 (1974-05-01), Hoff, Jr.
patent: 4267558 (1981-05-01), Guterman
patent: 4267583 (1981-05-01), Suzuki
patent: 4371883 (1983-02-01), Potember et al.
patent: 4616340 (1986-10-01), Hayashi et al.
patent: 4631562 (1986-12-01), Avery
patent: 4652894 (1987-03-01), Potember et al.
patent: 4677742 (1987-07-01), Johnson
patent: 4733375 (1988-03-01), Terashima
patent: 4834911 (1989-05-01), Carew
patent: 4839700 (1989-06-01), Ramesham et al.
patent: 4860254 (1989-08-01), Pott et al.
patent: 5012445 (1991-04-01), Kazuaki et al.
patent: 5034192 (1991-07-01), Wrighton et al.
patent: 5130380 (1992-07-01), Carew
patent: 5136212 (1992-08-01), Eguchi et al.
patent: 5153681 (1992-10-01), Kishimoto et al.
patent: 5196912 (1993-03-01), Matsumoto et al.
patent: 5206525 (1993-04-01), Yamamoto et al.
patent: 5245543 (1993-09-01), Smayling et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5315131 (1994-05-01), Kishimoto et al.
patent: 5319564 (1994-06-01), Smayling et al.
patent: 5355235 (1994-10-01), Nishizawa et al.
patent: 5392236 (1995-02-01), Hashimoto
patent: 5412614 (1995-05-01), Bird
patent: RE34974 (1995-06-01), Terashima
patent: 5431883 (1995-07-01), Barraud
patent: 5440518 (1995-08-01), Hazani
patent: 5451811 (1995-09-01), Whitten et al.
patent: 5563081 (1996-10-01), Ozawa
patent: 5572472 (1996-11-01), Kearney et al.
patent: 5579199 (1996-11-01), Kawamura et al.
patent: 5670818 (1997-09-01), Forouhi et al.
patent: 5691935 (1997-11-01), Douglass
patent: 5698874 (1997-12-01), Hayashi
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5770885 (1998-06-01), McCollum et al.
patent: 5818749 (1998-10-01), Harshfield
patent: 5849403 (1998-12-01), Aoki et al.
patent: 5869882 (1999-02-01), Chen et al.
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5900662 (1999-05-01), Frisina et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6060338 (2000-05-01), Tanaka et al.
patent: 6064589 (2000-05-01), Walker
patent: 6088319 (2000-07-01), Gudesen
patent: 6118684 (2000-09-01), Yihong et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6150705 (2000-11-01), Chen
patent: 6288697 (2001-09-01), Eto et al.
patent: 6292396 (2001-09-01), Tailliet
patent: 6326936 (2001-12-01), Inganas et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6353559 (2002-03-01), Hasegawa et al.
patent: 6384427 (2002-05-01), Yamazaki et al.
patent: 6403396 (2002-06-01), Gudesen et al.
patent: 6403397 (2002-06-01), Katz
patent: 6407953 (2002-06-01), Cleeves
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6424553 (2002-07-01), Berggren et al.
patent: 6426891 (2002-07-01), Katori
patent: 6429457 (2002-08-01), Berggren et al.
patent: 6432739 (2002-08-01), Gudesen et al.
patent: 6449184 (2002-09-01), Kato et al.
patent: 6459095 (2002-10-01), Heath et al.
patent: 6461916 (2002-10-01), Adachi et al.
patent: 6473351 (2002-10-01), Tomanek et al.
patent: 6487106 (2002-11-01), Kozicki et al.
patent: 6621740 (2003-09-01), Hosogane et al.
patent: 6627944 (2003-09-01), Mandell et al.
patent: 6635914 (2003-10-01), Kozicki et al.
patent: 6670637 (2003-12-01), Yamazaki et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 2001/0054709 (2001-12-01), Heath et al.
patent: 2001/0055384 (2001-12-01), Yamazaki et al.
patent: 2002/0104889 (2002-08-01), Forrest et al.
patent: 2002/0125504 (2002-09-01), Perlov et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2002/0163828 (2002-11-01), Krieger et al.
patent: 2002/0163829 (2002-11-01), Bulovic et al.
patent: 2002/0163831 (2002-11-01), Krieger et al.
patent: 196 40 239 (1998-04-01), None
patent: 199 59 904 (2001-06-01), None
patent: 0 268 370 (1988-05-01), None
patent: 268370 (1988-05-01), None
patent: 0 385 688 (1990-09-01), None
patent: 0 727 822 (1996-08-01), None
patent: 7-106440 (1995-04-01), None
patent: 2071126 (1996-12-01), None
patent: WO 93/04506 (1993-03-01), None
patent: WO 99/04440 (1999-01-01), None
patent: WO 99/08325 (1999-02-01), None
patent: WO 99/14762 (1999-03-01), None
patent: WO 99/19900 (1999-04-01), None
patent: WO 00/26918 (2000-05-01), None
patent: WO 00/48196 (2000-08-01), None
patent: WO 02/35580 (2002-05-01), None
patent: WO 02/37500 (2002-05-01), None
patent: WO 02/43071 (2002-05-01), None
patent: WO 02/078003 (2002-10-01), None
patent: WO 02/091384 (2002-11-01), None
patent: WO 02/091385 (2002-11-01), None
patent: WO 02/091476 (2002-11-01), None
patent: WO 02/091494 (2002-11-01), None
patent: WO 02/091495 (2002-11-01), None
patent: WO 02/091496 (2002-11-01), None
patent: WO 03/017282 (2003-02-01), None
“A Disrupted Organic Film: Could Memories Be Made of This?,” ORNL Review, 2000, vol. 33, No. 2.
“Technical Summary of Programmable Metallization Cell Memory Technology,” Dec. 2001, Version 1.3.
“The 1998 Conference Archive,” The Sixth Foresight Conference on Molecular Nanotechnology, Nov. 12-15, 1998, www.foresight.org/Conferences/MNT6/index.html.
Beck, et al., “Reproducible Switching Effect in Thin Oxide Films for Memory Applications,” Applied Physics Letters, Jul. 3, 2000, pp. 139-141, vol. 77, No. 1.
Bernard, “A Big Name in Chips Helps Coatue in Molecular Memory Race,” Aug. 27, 2000, www.nanoelectronicsplanet.com/features/articte/0,4028,6571-1452831,00.html.
Chen, et al., “Room-temperature Negative Differential Resistance in Nanoscale Molecular Junctions,” Applied Physics Letters, Aug. 21, 2000, vol. 77, No. 8.
Collier, C. P. et al., “Electrically Configurable Molecular-Based Logic Gates,” Science, Jul. 16, 1999, pp. 391-394, vol. 285.
Gannon, “Toward the Next Generation CD,” Physical Review Focus, Feb. 16, 2000.
Gao, et al., “Reversible, Nanometer-Scale Conductance Transitions in an Organic Complex,” Physical Review Letters, Feb. 21, 2000, pp. 1780-1783, vol. 84, No. 8.
Gao, H. .J. et al., “Using a New Kind of Organic Complex System of Electrical Bistability for Ultrahigh Density Data Storage,” J. Vac. Sci. Technol. B, Jul./Aug. 1997, pp. 1581-1583, vol. 15, No. 4.
International Search Report, PCT/RU01/00334, search completed Feb. 14, 2002.
International Search Report, PCT/US02/14236, search completed Aug. 14, 2002.
International Search Report, PCT/US02/14237, search completed Sep. 9, 2002.
International Search Report, PCT/US02/14238, search completed Aug. 9, 2002.
International Search Report, PCT/US02/1 4239, search completed Aug. 20, 2002.
International Search Report, PCT/US02/14269, search completed Mar. 27, 2003.
International Search Report, PCT/US02/14270, search completed Mar. 28, 2003.
Japanese patent abstract of publication No. 01-103137, Apr. 20, 1989.
Japanese patent abstract of publication No. 01278781, Nov. 9, 1989.
Japanese patent abstract of publication No. 61107723, May 26, 1986.
Japanese patent abstract of publication No. 63293729, Nov. 30, 1998.
Krieger, et al., “Molecular Analogue Memory Cell Based on Electrical Switching and Memory in Molecular Thin Films,” Synthetic Metals, 2000, pp. 1-4, 7730.
Krieger, et al., “Molecular Analogue Memory Cell,” Sixth Foresight Conference on Molecular Nanotechnology, Santa Clara, California, Nov. 12-15, 1998.
Krieger, et al., “Study of Test Structures of a Molecular Memory Element,” Institute of Inorganic Chemistry, Siberian Bran
Bulovic Vladimir
Mandell Aaron
Perlman Andrew
Amin Turocy & Calvin LLP
Lee Kyoung
Spansion LLC
LandOfFree
Reversible field-programmable electric interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reversible field-programmable electric interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reversible field-programmable electric interconnects will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3860351