Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-11-13
2007-11-13
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000
Reexamination Certificate
active
10619596
ABSTRACT:
A method for transferring a first substrate to a second substrate. First and second front faces of first and second substrates, respectively, are molecularly bonded to each other to provide a composite structure. The first front face has a first outline, the second front face has a second outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The second outline has dimensions larger than the first outline, such that during bonding at least a portion of the first outline is disposed within the second outline for minimizing the size of a peripheral region about the first front face within an overlapping area at which the front faces overlap, in which peripheral region the bonding between the faces is weak or absent. A useful layer from a donor substrate, the useful layer comprising one of the first or second substrate adjacent the bonded face thereof.
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Chen Jack
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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