Method for removing mottled etch in semiconductor...

Details Method for removing mottled etch in semiconductor... Method for removing mottled etch in semiconductor...

2007-10-02

2007-10-02

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21026, C438S750000, C438S963000

Reexamination Certificate

active

11024728

ABSTRACT:
A method for removing mottled etch in a semiconductor fabricating process, prevents mottled etch from being generated after etching, by performing ashing using an oxide plasma, prior to performing wet etching using a photoresist pattern. The method for removing the mottled etch includes the steps of forming a gate oxide film on a semiconductor substrate; forming a photoresist pattern on the substrate; performing ashing using an oxygen plasma; and removing the oxide film consequently by wet etching, the oxide film being opened by the pattern.

REFERENCES:
patent: 4861424 (1989-08-01), Fujimura et al.
patent: 6432618 (2002-08-01), Hui et al.
patent: 6498106 (2002-12-01), Hsin et al.
patent: 2002/0068376 (2002-06-01), Hsieh
patent: 2005/0199262 (2005-09-01), Jeon et al.
patent: 63-102251 (1998-05-01), None

Affiliated with

Also associated with

Rating

Method for removing mottled etch in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing mottled etch in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing mottled etch in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3857707