Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-02-27
2007-02-27
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S281000, C257S282000, C257S347000, C438S098000, C438S167000
Reexamination Certificate
active
09978528
ABSTRACT:
A silicon on insulator transistor is disclosed which has a Schottky contact to the body. The Schottky contact may be formed on the source and/or drain side of the gate conductor. A spacer, with at least a part thereof being disposable, is formed on the sidewalls of the gate conductor. Extension regions are provided in the substrate which extend under the spacer and the gate conductor. Source and drain diffusion regions are implanted into the substrate adjacent to the extension regions. The disposable part of the spacer is then removed to expose a portion of the extension region. A metal layer is formed at least in the extension regions, resulting in the Schottky contact.
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Bryant Andres
Lasky Jerome B.
Leobandung Effendi
Schepis Dominic J.
Andujar Leonardo
Connolly Bove & Lodge & Hutz LLP
Hume Larry
International Business Machines - Corporation
Sabo, Esq. William
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