Semiconductor device having a superlattice structure

Details Semiconductor device having a superlattice structure Semiconductor device having a superlattice structure

1994-11-16

1996-06-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257 27, H01L 2712, H01L 27082

Patent

active

055235859

ABSTRACT:
A semiconductor device according to the invention has a channel layer, which is sandwiched by a first and a second barrier layers, and an electron supply layer for supplying the channel layer with electrons through at least one of the barrier layers. The channel layer has a superlattice structure formed by periodically repeating, in the direction of electron movement, a first and a second semiconductor material regions, each of which has a different band gap from the other. With this superlattice structure, a plurality of mini-bands are formed within a potential well, which is formed by the first and second barrier layers. Impurity concentration of the electron supply layer is so controlled that electrons may move mainly within a mini-band in which effective mass of electrons is minimum among those mini-bands. Thus, a semiconductor device having a high electron mobility in the room temperature can be obtained without requiring high purification of crystal.

REFERENCES:
patent: 4591889 (1986-05-01), Gossard et al.
patent: 5212404 (1993-05-01), Awano

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