Memory element and memory device

Details Memory element and memory device Memory element and memory device

2007-12-11

2007-12-11

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257SE45003, C365S148000

Reexamination Certificate

active

11302781

ABSTRACT:
A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided.A memory element10includes a memory layer4and an ion source layer3positioned between the first electrode2and second electrode6, in which the ion source layer3contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer4is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.

REFERENCES:
patent: 7129133 (2006-10-01), Avanzino et al.

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