Organic field effect transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C438S099000

Reexamination Certificate

active

10841807

ABSTRACT:
A field effect transistor is provided which comprises a gate electrode, a source electrode, a drain electrode, at least one organic semiconducting layer, and a hole transport layer for transferring holes from said source and drain electrodes to said organic semiconducting layer, wherein said hole transport layer comprises a layered metal chalcogenide. Processes for depositing a thin layer of a layered metal dichalcogenide on a substrate and for producing top gate structures on a layered metal chalcogenide layer in the manufacture of field effect transistors according to the invention are also provided.

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Horowitz, Gilles, “Organic Field-Effect Transistors”,Advanced Materials10(5), (Mar. 23, 1998), 365-377.
Sirringhaus, Henning, et al., “Integrated Optoelectronic Devices Based on Conjugated Polymers”,Science, American Association for the Advancement of Science 280, (Jun. 12, 1998), 1741-1744.

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