Optical semiconductor device and method for fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S097000, C257S622000, C372S045013

Reexamination Certificate

active

10298011

ABSTRACT:
Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization dependency can be eliminated as described above. Thus, the optical semiconductor device can have very low polarization dependency.

REFERENCES:
patent: 4276098 (1981-06-01), Nelson et al.
patent: 4731790 (1988-03-01), Sawai
patent: 5608229 (1997-03-01), Mukai et al.
patent: 6653653 (2003-11-01), Brousseau, III
patent: 6683013 (2004-01-01), Kim et al.
patent: 6744960 (2004-06-01), Pelka
patent: HEI 05-21903 (A) (1993-01-01), None
patent: 05-343800 (1993-12-01), None
patent: 06-132614 (1994-05-01), None
patent: 08-125256 (1996-05-01), None
patent: 08-201739 (1996-08-01), None
patent: 2001-308467 (2001-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optical semiconductor device and method for fabricating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical semiconductor device and method for fabricating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device and method for fabricating the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3853877

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.