Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2007-10-02
2007-10-02
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S474000, C257S484000, C257S928000, C257SE27040, C257SE29338
Reexamination Certificate
active
11473886
ABSTRACT:
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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Translation of an Official Letter dated Dec. 20, 2006 for corresponding German patent application No. 198 24 514.9-33; Fuji Electric Co. Ltd.; 98/66657; pp. 1-3.
Fujihira Tatsuhiko
Miyasaka Yasushi
Fuji Electric & Co., Ltd.
Pham Hoai
Rossi Kimms & McDowell LLP
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