Apparatus and method for producing single crystal, and...

Details Apparatus and method for producing single crystal, and... Apparatus and method for producing single crystal, and...

2007-11-27

2007-11-27

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S032000, C117S045000, C117S917000

Reexamination Certificate

active

11131333

ABSTRACT:
The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

REFERENCES:
patent: 2000-272992 (2000-10-01), None
patent: 2001-158690 (2001-06-01), None
patent: 2003-002783 (2003-01-01), None
patent: 2003-002784 (2003-01-01), None
patent: 2003-055092 (2003-02-01), None
Jung, et al., Effect of the crystal-melt interface on the grown-in defects in silicon CZ growth,□□Journal of Crystal Growth (2007), vol. 299(1), pp. 152-157.

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