Method for growing single crystal of semiconductor

Details Method for growing single crystal of semiconductor Method for growing single crystal of semiconductor

2007-06-26

2007-06-26

Gupta, Yogendra (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S030000, C117S032000, C117S917000, C117S200000, C117S013000, C117S014000, C117S015000

Reexamination Certificate

active

10030867

ABSTRACT:
By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible, a single crystal is pulled or the raw material is additionally introduced with heating by the heater surrounding the crucible and the subsidiary heating means when the amount of the raw material melt in the crucible becomes a limited amount. Thus, there is provided a method for growing a single crystal at a high yield while preventing solidification of melt raw material decreased to a limited amount without affecting crystal quality, durability of crucible or the like even when a crucible having a large diameter is used.

REFERENCES:
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5885344 (1999-03-01), Kim et al.
patent: 6156119 (2000-12-01), Hoshi et al.
patent: 6458202 (2002-10-01), Kojima et al.
patent: 6562125 (2003-05-01), Schupp et al.
patent: 6602345 (2003-08-01), Schupp et al.
patent: 2-221184 (1990-09-01), None
patent: 7-133187 (1995-05-01), None
patent: 8-143392 (1996-06-01), None
patent: 9-175889 (1997-07-01), None
Sears et al., University Physics, 7th Ed., Addison-Wesley Pub Co., pp. 363-365, 1987.

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