N-Channel JFET device compatible with existing bipolar integrate

Details N-Channel JFET device compatible with existing bipolar integrate N-Channel JFET device compatible with existing bipolar integrate

1980-01-21

1982-03-30

Edlow, Martin H.

357 41, 357 52, H01L 2980

Patent

active

043227384

ABSTRACT:
A buried n-channel junction field-effect transistor (JFET) fabricated in standard bipolar integrated circuit starting material. The transistor has a deep p-well as the bottom gate formed in an n-type body. The source is surrounded by the p-well while the drain is the epitaxial layer near the surface of the body outside the p-well. A buried channel connects the source and drain. A p-layer above the buried channel forms the top gate. Gate leakage current and noise are very low.

REFERENCES:
patent: 3413531 (1968-01-01), Leith
patent: 4143392 (1979-03-01), Mylroie
patent: 4181542 (1980-01-01), Yoshida

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