Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-12-11
2007-12-11
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C438S046000
Reexamination Certificate
active
10332259
ABSTRACT:
A light-emitting diode based on GaAlAs has a window layer (5) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 ×1018cm−3. This provision lessens the degradation of the light-emitting diode (1).
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Grönninger Günther
Heidborn Peter
Cohen Pontani Lieberman & Pavane LLP
Osram GmbH
Pham Long
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