Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-13

2007-02-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S437000, C257SE29117

Reexamination Certificate

active

11091570

ABSTRACT:
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

REFERENCES:
patent: 6624473 (2003-09-01), Takehashi et al.
patent: 6963083 (2005-11-01), Nam
patent: 2005/0236618 (2005-10-01), Toyoda et al.
patent: 2005/0253195 (2005-11-01), Toyoda et al.
patent: 2001-345448 (2001-12-01), None
patent: 2002-76351 (2002-03-01), None
U.S. Appl. No. 11/376,414, filed Mar. 16, 2006, Toyoda et al.

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