Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-12
2007-06-12
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185210, C365S185200, C365S185180, C365S185030
Reexamination Certificate
active
11198212
ABSTRACT:
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled to the bit lines to determine if memory cells have a erase level that is within predetermined upper and lower limits. The verify circuit can include first and second comparators. In one embodiment, the first comparator is used to compare a bit line current with an upper first reference current. The second comparator is used to compare a bit line current with a lower second reference current. The comparator circuit is not limited to reference currents, but can use reference voltages to compare to a bit line voltage. The verify circuit, therefore, eliminates the need for separate bit line leakage testing to identify over-erased memory cells.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Tran Andrew Q.
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