Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-20

2007-02-20

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S751000, C257S760000, C257S762000, C257S763000, C257S774000, C257SE21585, C257SE21641

Reexamination Certificate

active

11168928

ABSTRACT:
A semiconductor device includes an insulating film whose relative dielectric constant is 3.4 or less, at least one conductive layer, at least one conductive plug which is electrically connected to the conductive layer to form a conduction path, at least one reinforcing material whose Young's modulus is 30 GPa or more, at least one first reinforcing plug which is connected to the conductive layer and which is formed in contact with the reinforcing material, a reinforcing metal layer which is provided in the insulating film in an area other than that where the conductive layer is formed, and which is electrically disconnected from the conductive layer and the conductive plug, and a second reinforcing plug which is connected to the under side of the reinforcing metal layer and which is formed in contact with the reinforcing material.

REFERENCES:
patent: 6037668 (2000-03-01), Cave et al.
patent: 6559548 (2003-05-01), Matsunaga et al.
patent: 6617690 (2003-09-01), Gates et al.
patent: 2003/0094696 (2003-05-01), Dunham et al.
patent: 2004/0119164 (2004-06-01), Kurashima et al.
patent: 1477705 (2004-02-01), None
patent: 11-176835 (1999-07-01), None
patent: 11-307633 (1999-11-01), None
patent: 2001-196372 (2001-07-01), None
patent: 2001-267323 (2001-09-01), None
Nofication of Reasons for Rejection (Office Action) for Chinese Patent Application No. 031565166, mailed Jun. 24, 2005 and English translation thereof.

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