Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2007-10-30
2007-10-30
McNeil, Jennifer C. (Department: 1775)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S701000, C428S702000, C428S469000, C428S472000, C428S446000, C428S450000
Reexamination Certificate
active
11245721
ABSTRACT:
A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
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Findikoglu Alp T.
Matias Vladimir
Los Almos National Security, LLC
McNeil Jennifer C.
Santandrea Robert P.
Speer Timothy M.
Teeter Holly L.
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