Treatment of a removed layer of silicon-germanium

Details Treatment of a removed layer of silicon-germanium Treatment of a removed layer of silicon-germanium

2007-06-19

2007-06-19

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C438S933000, C257SE21211

Reexamination Certificate

active

11145482

ABSTRACT:
A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si1-xGexand a second layer of Si1-yGey. The method includes implanting atomic species into the donor wafer to form a zone of weakness in the first layer; bonding the donor wafer to a receiver wafer; detaching the second layer and a portion of the first layer from the donor wafer by supplying energy sufficient to cause cleavage and form an intermediate structure thereof conducting a rapid thermal anneal of the intermediate structure at a temperature of about 1000° C. or more for less than 5 minutes; and removing by selective etching any remaining portions of the first layer of the intermediate structure to provide a semiconductor structure that has the second layer on the receiving wafer.

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