Method of fabrication of thin film transistors

Details Method of fabrication of thin film transistors Method of fabrication of thin film transistors

1991-06-03

1992-08-25

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 37, 437101, H01L 21223

Patent

active

051418851

ABSTRACT:
A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.

REFERENCES:
patent: 4169740 (1979-10-01), Kalbitzer et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4998152 (1991-03-01), Batey et al.
M. J. Powell, "Amorphous-Silicon Thin-Film Transistors: Performance and Material Properties", Proceedings of the SID, Vol. 26/3, 1985, pp. 191-196.
H. F. Bare and G. W. Neudeck, "Ion Implanted Contacts to a-Si:H Thin-Film Transistors", IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986, pp. 431-433.

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