Vertical protecting element formed in semiconductor...

Details Vertical protecting element formed in semiconductor... Vertical protecting element formed in semiconductor...

2007-02-06

2007-02-06

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S107000, C257SE29338

Reexamination Certificate

active

11257503

ABSTRACT:
Between a terminal of an element to be protected and a GND terminal, a protecting element is connected, which includes a first n+ region, an insulating region and a second n+ region. The first n+ region is provided to have a columnar shape in a depth direction of a substrate, and the second n+ region is formed to have a plate shape and disposed so as to face a bottom of the first n+ region. Thus, it is possible to allow a very large static current to flow into a ground potential through a first current path and a second current path. Thus, electrostatic energy reaching an operation region of a HEMT can be significantly reduced while hardly increasing a parasitic capacity.

REFERENCES:
patent: 6121661 (2000-09-01), Assaderaghi et al.
patent: 6-029466 (1994-02-01), None
patent: 7-169918 (1995-07-01), None
patent: WO-2004-027869 (2004-04-01), None

Affiliated with

Also associated with

Rating

Vertical protecting element formed in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical protecting element formed in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical protecting element formed in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3845233